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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-126 package *High voltage ,high speed APPLICATIONS *Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE13003 ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Emitter current Emitter current-Peak Total power dissipation Junction temperature Storage temperature Ta=25 TC=25 CONDITIONS Open emitter Open base Open collector VALUE 700 400 9 1.5 3 0.75 1.5 2.25 4.5 1.4 40 150 -65~150 UNIT V V V A A A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 3.12 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unles otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector outoput capacitance CONDITIONS IC=10mA ;IB=0 IC=0.5A; IB=0.1A IC=1A; IB=0.25A TC=100 IC=1.5A;IB=0.5A IC=0.5A; IB=0.1A IC=1A; IB=0.25A TC=100 VCEV=Rated value; VBE (off) =1.5V TC=100 VEB=9V; IC=0 IC=0.5A ; VCE=2V IC=1A ; VCE=2V IC=0.1A ; VCE=10V;f=1MHz IE=0;f=0.1MHz ; VCB=10V 8 5 4 MIN 400 MJE13003 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 ICEV IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V 0.5 1.0 1.0 3.0 1.0 1.2 1.1 1.0 5.0 1.0 40 25 V V V V V mA mA MHz 21 pF Switching times resistive load td tr ts tf Delay time Rise time Storage time Fall time VCC=125V ,IC=1A IB1=-IB2=0.2A tp=25s duty cycleC1% 0.05 0.5 2.0 0.4 0.1 1.0 4.0 0.7 s s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJE13003 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE13003 4 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE13003 5 |
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